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inchange semiconductor product specification silicon npn power transistors 2SD1879 description ? with to-3pml package ? high speed ? high breakdown voltage ?high reliability ? built in damper diode applications ? color tv horizontal deflection output ? color display horizontal deflection output. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a i cm collector current-peak 20 a t c =25 ?? 60 p c collector power dissipation 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1879 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 800 v v cesat collector-emitter saturation voltage i c =5a ;i b =1a 5 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v i cbo collector cut-off current v cb =800v ;i e =0 10 | a i ebo emitter cut-off current v eb =4v ;i c =0 40 130 ma i ces collector cut-off current v ce =1500v 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =5a ; v ce =5v 5 10 v f diode forward voltage i ec =6a ;i b =0 2 v t f fall time i c =4a;r l =50 |? ; v cc =200v i b1 =0.8a;- i b2 =1.6a 0.1 0.3 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD1879 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors 2SD1879 |
Price & Availability of 2SD1879 |
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